Scientific and industry-oriented projects included partners like Infineon Villach (GaN high-power electronics for e-mobility), CERN (superconducting magnets for fusion), Danubia Nanotech (2D-materials), etc. Electronics based on GaN is supposed to build highly efficient units for charging and propulsion of electronic and hybrid cars. IEE SAS has relevant expertise in developing GaN-based devices, and has been working in the field since 2004 (FP6 Project Ultragan, coordinated by Alcatel Thales, FP 7 Project Morgan coordinated by Alcatel Thales, FP 7 project HipoSwitch coordinated by FBH Berlin, V4-Japan project SafeMost coordinated by IEE SAS). Currently IEE SAS develops GaN transistors for safe operation of invertors and proof-of-concept vertical GaN transistors for 600 V operation range, both with potential usage in e-mobility. IEE holds PCT patent application for GaN-based vertical transistor.